Two H and two Si-related defect centers were detected and characterized by electron spin resonance in films grown by chemical vapor deposition. Observations of the hyperfine structure, combined with illumination and polishing treatments, suggested that the KUL2 and KUL9 electron spin resonance centers originated from 2 charge states of one defect, which contained a vacancy and an adjacent H atom, while the KUL1 and KUL8 centers could be associated with 2 charge states of another defect, which involved one Si atom. The KUL2 and KUL9 centers were tentatively attributed to [H-2V]- and [H-2V]0 complexes, respectively.

ESR and Photo-ESR Study of Defects in CVD Diamond. K.Iakoubovskii, A.Stesmans, M.Nesladek, G.Knuyt: Physica Status Solidi A, 2002, 193[3], 448-56