Two H and two Si-related defect centers were detected and were characterized by electron-spin resonance in films grown by chemical vapor deposition. Observation of the hyperfine structure, combined with illumination and polishing treatments, suggested that the KUL2 and KUL9 electron spin resonance centers originated from 2 charge states of one defect which contained a vacancy and an adjacent H atom, while the KUL1 and KUL8 spectra could be associated with 2 charge states of another defect which involved one Si atom and exhibited trigonal symmetry. The KUL2 and KUL9 centers were tentatively attributed to negatively charged and neutral H-divacancy complexes, respectively.

Characterization of Hydrogen and Silicon-Related Defects in CVD Diamond by Electron Spin Resonance. K.Iakoubovskii, A.Stesmans: Physical Review B, 2002, 66[19], 195207 (7pp)