Experimental evidence was found for the B-enhanced diffusion of N in ion-implanted 4H-type material when a N implant was co-doped within an existing B p-type well. The co-implanted N was shown to diffuse continuously with time when samples were annealed at 1600C; with little movement of the B p-well implant profile. The effective N in B diffusivity at 1600C was determined to be at least 60 times greater than that of a mono-doped N implant.

Enhanced Nitrogen Diffusion in 4H-SiC. G.J.Phelps, N.G.Wright, E.G.Chester, C.M.Johnson, A.G.O’Neill, S.Ortolland, A.Horsfall, K.Vassilevski, R.M.Gwilliam, P.G.Coleman, C.P.Burrows: Applied Physics Letters, 2002, 80[2], 228-30