Intrinsic-related defect centers in 4H–/6H–SiC were generated by implantation of He ions, protons or by irradiation of high energy electrons. The formation and thermal stability of these centers were studied by deep level transient and positron annihilation spectroscopy subsequent to anneals at 600 to 1800C. It turns out that the formation of intrinsic-related defect centers depended upon the injected particle. Further defect centers were identified which showed identical temperature dependence of deep-level transient spectroscopic defect concentrations and positron capture rates.

Formation and Annihilation of Intrinsic-Related Defect Centers in High Energy Electron-Irradiated or Ion-Implanted 4H– and 6H–Silicon Carbide. M.Weidner, T.Frank, G.Pensl, A.Kawasuso, H.Itoh, R.Krause-Rehberg: Physica B, 2001, 308-310, 633-6