The defects introduced into n-type, intrinsic and p-type doped SiC by low-energy (300keV) room-temperature electron irradiation near to the Si atom displacement threshold were analyzed by means of electron paramagnetic resonance. The predominant formation of defects currently attributed to C-vacancy+H complexes was observed in Al-doped and high-purity intrinsic material, with no isolated C vacancies. If the models were correct, the results implied the presence of highly mobile H and their interaction with VC defects, even at 300K. In n-type SiC, two VSi related centers were observed and were tentatively attributed to 2-/3- charge states.

Electron Irradiation-Induced Defects in Monocrystalline 4H–SiC and 6H–SiC - the Influence of the Electron Energy and Doping. H.J.von Bardeleben, J.L.Cantin: Applied Surface Science, 2001, 184[1-4], 237-41