A brief review was presented of electron paramagnetic resonance studies of irradiation-induced defects in SiC. The results of a low-temperature study of Ky1 and Ky2 centers revealed for both of them: a CS symmetry, spin S = ½ and a close coincidence of the g-tensor components. For the Ky2 defect, the principal values of g-tensor were determined to be: gz = 2.0048, gx = 2.0022 and gy = 2.0037, where the z and x directions resided in the (11•0) plane and the z-axis made an angle of 65° with the c-axis. The same residence of z- and x-axis and an angle of 59° were found for the Ky1 center: gz = 2.0058, gx = 2.0025 and gy = 2.0023. A comparison of experimental and calculated hyperfine parameters suggested that the Ky2 and Ky1 defects could be attributed to the positively charged C vacancy in 6H–SiC. The electron paramagnetic resonance study of defects created along the Al+ ion track in n-type 6H–SiC showed that the lineshape, linewidth and integral intensity of the electron paramagnetic resonance signal reflected the state of the damaged layer generated by ion implantation. A variation of the defect density during annealing was reported.

Vacancy-Related Defects in Ion-Beam and Electron-Irradiated 6H–SiC. V.Y.Bratus, T.T.Petrenko, H.J.von Bardeleben, E.V.Kalinina, A.Hallén: Applied Surface Science, 2001, 184[1-4], 229-36