The bulk degradation of SiC in hadron (pion and proton) fields, in the energy range of 100MeV to 10GeV, was characterized theoretically in terms of the concentration of primary defects per unit fluence. The results were compared to similar ones for diamond, Si and GaAs.

Theoretical Calculations of the Primary Defects Induced by Pions and Protons in SiC. S.Lazanu, I.Lazanu, E.Borchi, M.Bruzzi: Nuclear Instruments and Methods in Physics Research Section A, 2002, 485[3], 768-73