Experiments on proton irradiation were performed using energies of 150keV, 8MeV and 1GeV. The capacitance–voltage characteristics measured at 650K showed that 8MeV and 1GeV proton irradiation of 6H-SiC led to an increase in the uncompensated donor concentration. However, the donor concentration in 6H-SiC remained unaffected after 150keV proton irradiation. Deep centers were investigated by means of deep-level transient spectroscopy. The results of the C–V measurements were interpreted by using deep-level transient spectroscopic data. The results obtained showed the possibility of using proton irradiation to produce local high-resistance regions in SiC.

DLTS Study of Defects in 6H- and 4H-SiC Created by Proton Irradiation. D.V.Davydov, A.A.Lebedev, V.V.Kozlovski, N.S.Savkina, A.M.Strelchuk: Physica B, 2001, 308-310, 641-4