Electron paramagnetic resonance spectroscopy was used to analyze the defects introduced by high-energy (MeV) proton implantation. Previous investigations of n-type SiC were here extended to the case of p-type Al-doped bulk samples. Both Si monovacancy and C vacancy related defects were observed. Their natures and introduction rates were determined. The results obtained were compared with published electrical studies in order to correlate the vacancy defects with the known electron and hole traps.

Electron Paramagnetic Resonance Study of Proton Implantation Induced Defects in Monocrystalline 4H– and 6H–SiC. H.J.von Bardeleben, J.L.Cantin: Nuclear Instruments and Methods in Physics Research Section B, 2002, 186[1-4], 201-5