Both n-type and p-type 6H-SiC samples were implanted with Be, and subsequently annealed at 1600C. Photoluminescence measurements revealed lines at 420 and 472nm. The photoluminescence lines at around 420nm were detected in various ion-implanted SiC samples and were attributed to transitions involving some implantation-induced intrinsic defect, labelled DII. The present observation of photoluminescence lines at 420nm in Be-implanted 6H-SiC supported the intrinsic model that DII might be a C-di-interstitial defect. The lines at 472nm, labelled DI in the photoluminescence spectra, had previously been identified as divacancy defect (VSi-VC). It was noted that it had been suggested that the electron traps, labeled Z1/Z2 and observed by deep-level transient spectroscopy, were due to the same divacancy defect. In the present experiments, although the DI series photoluminescence lines were prominent, the deep-level transient spectroscopic results for the same samples showed no Z1/Z2-related peaks. The photoluminescence and deep-level transient spectroscopy results seemed to argue against the possibility that Z1/Z2 arose from the same defect.

Photoluminescence Study of Beryllium Implantation-Induced Intrinsic Defects in 6H-Silicon Carbide. S.Fung, X.D.Chen, C.D.Beling, Y.Huang, Q.Li, S.J.Xu, M.Gong, T.Henkel, H.Tanoue, N.Kobayashi: Physica B, 2001, 308-310, 710-3