Co-implantation of Al (2 x 1018/cm3) and C (1018/cm3) into 6H–SiC, and subsequent annealing at up to 1650C, were performed. Vacancy-type defects in the implanted layers were studied by positron annihilation spectroscopy. The mean size of the vacancy-type defects produced by the Al/C-implantation was found to be close to the size of a divacancy. The mean size of the vacancy-type defects was hardly changed by annealing below 600C, and vacancy clustering occurred during annealing at 600 to 1000C. At annealing temperatures between 1000 and 1400C, the mean size of vacancy-type defects decreased and the major vacancy defects annealed out above 1400C. No significant difference was observed, in the annealing behaviors of vacancy-type defects, between samples implanted with Al/C or Al alone.

Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions. T.Ohshima, A.Uedono, H.Abe, Z.Q.Chen, H.Itoh, M.Yoshikawa, K.Abe, O.Eryu, K.Nakashima: Physica B, 2001, 308-310, 652-5