The difference in secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by means of transmission electron microscopy. For a given

volume concentration of implanted ions, the density of secondary defects in Al+-implanted layers was higher than that in B+-implanted layers, and the mean defect size in the B+-implanted layers was higher than that in the Al+-implanted layers. These secondary defects were formed by the agglomeration of self-interstitials, and the number of interstitials stored in the defects coincided roughly with that of the implanted ions. This correlation did not depend upon the ion species. The activation energies of secondary defect formation were not significantly different for B+ and Al+ implanted layers. The B+ and Al+ implanted layers had differing agglomerations of interstitials, which caused the differences in defect size and density. This difference did not arise from the self-diffusion of interstitials in implanted layers, but was probably due to the initial nucleation of defects.

Difference of Secondary Defect Formation by High Energy B+ and Al+ Implantation into 4H–SiC. T.Ohno, N.Kobayashi: Journal of Applied Physics, 2002, 91[7], 4136-42