The implantation of Be into p-type 6H–SiC, and subsequent thermal annealing, were performed. The deep-level defects which were introduced by the Be implantation were investigated by using deep-level transient spectroscopy. Four deep levels, labelled BEP1, BEP2, BEP3 and BEP4, were detected at 100 to 500K. The prominent hole trap, BEP1, with an energy level at EV+0.41eV agreed well with the acceptor level of Be as determined by Hall-effect measurements. The remaining hole traps, with energy levels at EV+0.60eV, EV+0.76eV and EV+0.88eV were suggested to be Be bombardment-induced defects or complexes.

Beryllium Implantation Induced Deep Level Defects in p-Type 6H–Silicon Carbide. X.D.Chen, C.C.Ling, S.Fung, C.D.Beling, M.Gong, T.Henkel, H.Tanoue, N.Kobayashi: Journal of Applied Physics, 2003, 93[5], 3117-9