Samples of 4H–SiC were implanted via (00•1) with 1.6MeV He+ ions to a dose of 1017/cm2 at room temperature. By using cross-sectional transmission electron microscopy, an investigation was made of the damage introduced by implantation and by annealing at 1500C. In the as-implanted sample, the damage region consisted of 3 layers; including a continuous amorphous layer surrounded by crystalline zones. After annealing, recrystallization of the amorphous state occurred and large bubbles or cavities were observed. A simple model, based upon atomic relocation, was used to explain the layered structure observed after implantation.

Defects Induced by High Energy Helium Implantation in 4H–SiC. M.F.Beaufort, E.Oliviero, M.L.David, J.Nomgaudyte, L.Pranevicius, A.Declémy, J.F.Barbot: Nuclear Instruments and Methods in Physics Research Section B, 2002, 186[1-4], 218-22