Dislocated Si, SiGe, SiC and SiGeC n-type heterostructures, grown by molecular beam epitaxy, were characterized by means of capacitance–voltage profiling and deep-level transient spectroscopy. Exclusively dislocation-related defects were found in the different layers, and corresponded to well-known defects found in plastically deformed Si.

Deep-Level Transient Spectroscopy of Dislocation-Related Defects in Epitaxial Multilayer Structures. E.Thor, M.Mühlberger, L.Palmetshofer, F.Schäffler: Journal of Applied Physics, 2001, 90[5], 2252-56