The microstructures of 4H-SiC single crystals, deformed under very high stresses and at up to 350C, were analyzed by using transmission electron microscopy. Depending upon the deformation conditions, large stacking faults, weakly dissociated perfect dislocations and possibly undissociated perfect dislocations were observed. From these results, it was deduced that the nucleation of partial dislocations, which was a limiting process in the deformation of 4H-SiC below about 1000C, could be helped by very high stress. Consequently, it was not impossible that deformation via undissociated perfect dislocations could occur under very high stresses.

Microstructures of 4H-SiC Single Crystals Deformed under Very High Stresses. J.L.Demenet, J.Rabier, X.Milhet, M.H.Hong, P.Pirouz, I.Stretton, P.Cordier: Journal of Physics - Condensed Matter, 2002, 14[48], 12961-6