It was recalled that triangular structural defects were occasionally generated during the long-term operation of 4H-SiC p-i-n diodes, and degraded the forward characteristics of the diode. Synchrotron white-beam X-ray topography, scanning electron microscopy, in situ cathodoluminescence and transmission electron microscopy were used to characterize the structure and formation of these defects. It was shown that the defects were stacking faults on the (00•1) basal planes, bounded by partial dislocations with Burgers vectors of 1/3<10•0> and 1/3<01•0>. These partials were suggested to form via the dissociation of existing dislocations.

Structural Defects in Electrically Degraded 4H-SiC p+/n–/n+ Diodes. P.O.Å.Persson, L.Hultman, H.Jacobson, J.P.Bergman, E.Janzén, J.M.Molina-Aldareguia, W.J.Clegg, T.Tuomi: Applied Physics Letters, 2002, 80[25], 4852-4