Results on the physical vapor transport growth of SiC bulk single crystals were presented which high-lighted crystal diameter enlargement and quality improvement in such crystals. The causes and formation mechanisms of crystallographic defects, such as micropipes and low-angle grain boundaries, were considered. The results of growth perpendicular to the c-axis were also reported, in which stacking faults were the defects of major concern. An atomistic surface model was presented for stacking-fault generation.

Growth of Large High-Quality SiC Single Crystals. N.Ohtani, T.Fujimoto, M.Katsuno, T.Aigo, H.Yashiro: Journal of Crystal Growth, 2002, 237-239[2], 1180-6