A novel technique was developed for eliminating planar defects from 3C-SiC hetero-epitaxial layers on Si substrates. Before growing 3C-SiC, slopes oriented in the [110] and [¯1¯10] directions were formed over the entire surface of the Si(001) substrate (so-called undulant-Si). In the initial stages of 3C-SiC growth, step-flow epitaxy occurred on the surface slopes of the substrate; thus reducing the antiphase boundaries. Continuous twin boundaries were arranged in parallel along the (111) or (¯1¯11) planes. The twin boundaries were eliminated by a combination of countered twin boundaries and 3C-SiC growth. No planar defects were observed on the surface of 200μ-thick 3C-SiC grown onto undulant-Si.

3C-SiC Hetero-Epitaxial Growth on Undulant Si(001) Substrate. H.Nagasawa, K.Yagi, T.Kawahara: Journal of Crystal Growth, 2002, 237-239[2], 1244-9