It was recalled that the DI low-temperature photoluminescence center was a well-known defect which was stable during annealing at up to 1700C, but its structure was not known. By combining experimental and theoretical studies, it was shown here that the properties of an antisite pair could reproduce the measured 1-electron level position and local vibration modes of the DI center.

Correlation Between the Antisite Pair and the DI Center in SiC. A.Gali, P.Deák, E.Rauls, N.T.Son, I.G.Ivanov, F.H.C.Carlsson, E.Janzén, W.J.Choyke: Physical Review B, 2003, 67[15], 155203 (5pp)