A metastable defect in 6H-SiC was characterized by using various junction space-charge techniques, annealing and simulation. A configuration coordinate diagram with 3 configurations was suggested, where 2 of them could exist only when the defect was occupied by one or more electrons. The thermal ionization energies for the various configurations were measured, and the thermal barriers for 2 of the transitions were determined. It was also shown that the transformation process was governed by electron capture to the defect.

Metastable Defects in 6H–SiC - Experiments and Modeling. C.G.Hemmingsson, N.T.Son, O.Kordina, E.Janzén: Journal of Applied Physics, 2002, 91[3], 1324-30