Defects in films and bulk crystals were detected by means of Raman scattering. It was found that the observation of defect-activated transverse optical bands at a Raman forbidden configuration was useful for the detection of small numbers of defects. The shape of the defect-activated Raman band was explained in terms of the structures of the defects.

Detection of Defects in SiC Crystalline Films by Raman Scattering. S.Nakashima, Y.Nakatake, Y.Ishida, T.Takahashi, H.Okumura: Physica B, 2001, 308-310, 684-6