The P-related defects in n-type 6H-SiC monocrystals, doped by neutron transmutation, were studied by means of electron paramagnetic resonance spectroscopy. After thermal annealing at 1900C, two sets of three P-related electron paramagnetic resonance spectra were observed. These were attributed to the isolated shallow P donor on the 2 quasi-cubic (c1, c2) and hexagonal sites as well as to a deep P center on the quasi-cubic and hexagonal sites. The deep P center was tentatively attributed to the PSi-C vacancy complex. The results showed, in agreement with theoretical predictions, that previous suggestions (that the 2 types of center were the ground and excited states of the isolated P donor) could be ruled out. The donor-monovacancy complexes were characterized by an exceptional thermal stability.

EPR Study of Shallow and Deep Phosphorus Centers in 6H-SiC. P.G.Baranov, I.V.Ilyin, E.N.Mokhov, H.J.von Bardeleben, J.L.Cantin: Physical Review B, 2002, 66[16], 165206 (7pp)