Molecular dynamics simulations, and a modified Tersoff potential, were used to study the primary damage state and statistics of defect production in displacement cascades in 3C-SiC. Recoils with energies ranging from 0.25 to 50keV were simulated at 300K. The results indicated that the displacement threshold energy surface was highly anisotropic, that the predominant surviving defects were C interstitials and vacancies, that the defect production efficiency decreased with increasing recoil energy, that the defect clusters were much smaller and more sparse when compared with those reported for metals and that a small fraction of the surviving defects were antisite defects.

Atomic Scale Simulation of Defect Production in Irradiated 3C-SiC. R.Devanathan, W.J.Weber, F.Gao: Journal of Applied Physics, 2001, 90[5], 2303-9