The stacking-fault density was significantly reduced, during the seeded sublimation growth of SiC single crystals in the [1¯1•0] direction, by growing the crystals onto a (1¯1•0) seed crystal which was several degrees off <00•1>. The density of the basal-plane stacking faults decreased rapidly from 100 to 150, to 10/cm, as the degree of misorientation was increased. The results indicated that stacking-fault formation was a kinetically induced process, and that the introduction of off-orientations prevented stacking-fault formation via modification of the surface growth kinetics.

Reduction of Stacking Fault Density during SiC Bulk Crystal Growth in the [11•0] Direction. N.Ohtani, M.Katsuno, T.Fujimoto: Japanese Journal of Applied Physics - 2, 2003, 42[3B], L277-9