The structure of stacking faults formed in forward-biased 4H- and 6H-SiC pn- diodes was determined by using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104/cm. All of the observed faults were isolated single-layer Shockley faults bound by partial dislocations with a Burgers vector of a/3<1¯1•0>-type.

Structure of Recombination-Induced Stacking Faults in High-Voltage SiC p–n Junctions. J.Q.Liu, M.Skowronski, C.Hallin, R.Söderholm, H.Lendenmann: Applied Physics Letters, 2002, 80[5], 749-51