First-principles calculations of stacking faults in 4H-type material indicated the occurrence of an interface band in the gap with a maximum depth of 0.2 to 0.3eV below the conduction band minimum at the ¯M point. The energy of formation of stacking faults in 3C-, 4H- and 6H-SiC, on the other hand, was found to be of the order of a few meV/pair. Thus, there was a thermodynamic driving force which promoted the growth of stacking-fault area in an n-type sample. Radiationless recombination of electrons, trapped at the stacking fault, with holes was suggested to provide sufficient energy to overcome the partial dislocation motion barriers to the formation of additional stacking fault area in a device under forward bias.

Stacking Fault Band Structure in 4H–SiC and its Impact on Electronic Devices. M.S.Miao, S.Limpijumnong, W.R.L.Lambrecht: Applied Physics Letters, 2001, 79[26], 4360-2