Micro-twins in 3C–SiC films grown on Si(001) by atmosphere-pressure chemical vapor deposition were investigated in detail by using X-ray 4-circle diffractometry. The Φ scans showed that 3C–SiC films could grow on Si substrates epitaxially, and the epitaxial relationship was revealed to be (001)3C–SiC||(001)Si, [111]3C–SiC||[111]Si. Other diffraction peaks at about 15.8° emerged in the pole figures of (111) 3C-SiC. The pole figure of (10•0)h–SiC and the reciprocal space mapping from the (111) reciprocal lattice point of base SiC to the (002) point of a micro-twin was obtained for the first time; thus indicating that the diffraction peaks at 15.8° resulted, not from hexagonal SiC but from micro-twins of 3C-SiC, and twin inclusions were estimated to be around 1%.

Comprehensive Analysis of Microtwins in the 3C–SiC Films on Si(001) Substrates. X.H.Zheng, B.Qu, Y.T.Wang, Z.Z.Dai, J.Y.Han, H.Yang, J.W.Liang: Journal of Crystal Growth, 2001, 233[1-2], 40-4