The annealing of implantation-induced lattice damage was studied by means of the perturbed angular correlation technique, using 181Hf(181Ta) and 111In(111Cd) probes. In AlN, substantial fractions of the probe atoms occupied substitutional undisturbed lattice sites after annealing. A detailed investigation of the changes observed during isochronous annealing indicated differences in the recovery process. After In-implantation, the AlN already exhibited considerable annealing of lattice damage at temperatures below 600C. After Hf-implantation, the AlN exhibited a so-called reverse annealing effect. In the case of InN, the perturbed angular correlation results revealed evidence of In clusters which formed easily during the growth of InN or InGaN.

Defect Recovery in AlN and InN after Heavy Ion Implantation. K.Lorenz, R.Vianden: Physica Status Solidi C, 2003, 0[1], 413-6