Generation–recombination noise was observed in Si-doped material. The magnitude and characteristic frequency of the generation–recombination noise power density were found to be thermally activated. By using a model which was based upon charge carrier number fluctuations in a 2-level system, the transition energies and potential barriers of the DX center formed by Si donors were determined quantitatively.

Generation–Recombination Noise of DX Centers in AlN:Si. S.T.B.Goennenwein, R.Zeisel, O.Ambacher, M.S.Brandt, M.Stutzmann, S.Baldovino: Applied Physics Letters, 2001, 79[15], 2396-8