Cubic-phase single crystals, grown under high-temperature and high-pressure conditions, were electron-irradiated in a transmission electron microscope. After irradiation, the samples were studied by means of low-temperature photoluminescence microscopy; excited by several different laser wavelengths. An approximate value for the displacement threshold was deduced, a new interstitial-related optical center was discovered and new characteristics of well-known radiation damage-induced optical centers were described. The results were explained in terms of recent calculations of point defects in cubic BN.

Near-Threshold Creation of Optical Centres in Electron Irradiated Cubic Boron Nitride. E.M.Shishonok, J.W.Steeds: Diamond and Related Materials, 2002, 11[10], 1774-80