The effects of H irradiation upon the optical properties of GaAs1-yNy epilayers in the dilute N limit were studied. It was found that H bombardment led to a progressive and finally complete passivation of bound exciton levels related to N complexes. Thermal annealing restored the optical properties that the samples possessed before hydrogenation. The results were accounted for by the formation of N-H complexes having various bond strengths and dissociation energies.

Nitrogen-Related Complexes in Ga(AsN) and Their Interaction with Hydrogen. M.Bissiri, V.Gaspari, G.B.H.von Högersthal, F.Ranalli, A.Polimeni, M.Capizzi, A.Frova, M.Fischer, M.Reinhardt, A.Forchel: Physica Status Solidi A, 2002, 190[3], 651-4