Distribution of threading dislocations in epitaxial lateral overgrowth GaN by hydride vapor-phase epitaxy was investigated. Two types of carrier gas, i.e., N2 and H2+N2, were used in the hydride vapor-phase epitaxy in order to change the facet structure of the epitaxial lateral overgrowth layer. Results of cathodoluminescence mapping and HCl vapor-phase etching revealed lower threading dislocation density in the epitaxial lateral overgrowth layer grown by using the H2+N2 mixed carrier gas than that by using the N2 carrier gas.

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2 and N2. S.Bohyama, K.Yoshikawa, H.Naoi, H.Miyake, K.Hiramatsu, Y.Iyechika, T.Maeda: Japanese Journal of Applied Physics - 1, 2002, 41[1], 75-6