Transmission electron microscope observation was carried out to analyze the behavior of dislocations in epitaxially lateral overgrown GaN, with special attention to the effect of mask size. In epitaxially lateral overgrown GaN grown on a mask of (W/T) = (5/5)μm, dislocations lying on (00•1), or horizontal dislocation, were formed, where (W/T) was the sizes of window and terrace. In case of (W/T) = (2/2)μm, the number of horizontal dislocations was small. This implied that these horizontal dislocations were generated by a certain multiplication such as the Frank-Read mechanism. Actually, a network of horizontal dislocations was observed near to the sharp point of a void on the mask terrace where an internal stress was concentrated.

Formation of Horizontal Dislocations in Epitaxially Lateral Overgrown GaN. S.Nishimoto, K.Horibuchi, K.Oki, N.Kuwano, H.Miyake, K.Hiramatsu: Physica Status Solidi A, 2001, 188[2], 739-42