The local structures in an ultra-thin Si oxynitride layer were examined by using scanning tunneling microscopy and spectroscopy. It was found that an atomic-scale structural change from an intrinsic Si-Si bond (defect) to a Si cluster (damaged region) took place because of the electrical damage during the scanning tunnelling microscopic and scanning tunneling spectroscopy observations. It was also found that N incorporation into the oxide suppresses the expansion of the damaged regions but increased the density of intrinsic defects.

Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer. N.Miyata, M.Ichikawa: Japanese Journal of Applied Physics - 2, 2001, 40[12A], L1271-3

Figure 5

Diffusion of Cu in Monocrystalline TaN