Amorphous Si oxynitride (a-SiOxNy) films were deposited at 300C by using a plasma-enhanced chemical vapor deposition technique, by varying the NH3 flow rate, [NH3], under fixed SiH4 and O2 flow rates to control the x- and y-values. The characteristics of defects were investigated vis-à-vis structural and bonding properties. These films were stoichiometric, including no or less homobonds. As [NH3] increased, the x- and y-values decreased and increased, respectively, and a relationship of 2x+3y = 4.14 was found. With increasing [NH3], the deposition rate increased, but the defect density and the stress could be decreased.

Defects in Silicon Oxynitride Films. M.Futatsudera, T.Kimura, A.Matsumoto, T.Inokuma, Y.Kurata, S.Hasegawa: Thin Solid Films, 2003, 424[1], 148-51