Thermal diffusion of Cu in a Cu/TaN/Si-sub sample was investigated after annealing (630C, 1h). The interface morphology, copper silicide grains and SiO2 thin layer were observed by using high resolution transmission electron microscopy. Depth profiles were obtained with an energy dispersion X-ray spectrometer in the transmission electron microscopic system. Based on the grain boundary theory of Fisher and the approximation solution of LeClaire, the thermal diffusivity of Cu into the TaN layer was estimated.

Copper Thermal Diffusion in TaN Film on Si Substrate. L.Jiang, P.He, G.He, X.Zong, C.Lee: Japanese Journal of Applied Physics - 1, 2002, 41[11A], 6525-8