The theory of dislocation density and curvature measurements using X-ray rocking curves was here extended to the case of hetero-epitaxial CeO2(001)/YSZ(001)/Si(001) films, mainly by high-resolution X-ray diffraction. According to this theory, the rocking curves of CeO2 and YSZ could be resolved into 2 simple components. Thus, the dislocation density and radius of curvature of each layer can be calculated from the distribution of the square of measured FWHM versus 1/sin2θ. The results showed that the YSZ layer had a higher dislocation density and a lower radius of curvature than CeO2. The high-resolution transmission electron microscopic image of CeO2/YSZ interface cross-section showed a high dislocation density along the interface with an average interval of some 3.9nm.

Defects in Heteroepitaxial CeO2/YSZ/Si(001) Films by Precise X-Ray Rocking Curve Distribution Fitness. C.H.Chen, N.Wakiya, A.Saiki, T.Kiguchi, K.Shinozaki, N.Mizutani: Physica B, 2001, 308-310, 1050-3