Large yields of β-Ga2O3 nanorods with a metal Ga tip were efficiently synthesized. They were deposited onto the surface of amorphous C fibers by the decomposition of Ga2O vapor at around 1000C, where the Ga2O vapor was produced at 1360C by a reaction between pure Ga2O3 and active C powders. The nanorods had diameters ranging from 10 to 100nm and lengths of up to several tens of μm. Twins and edge dislocations having a Burgers vector of 0.0859Å [2.66, 3.66, ¯1] existed in the nanorods. A red-shift of 4 to 23/cm was found in the Raman scattering spectrum of nanorods, as compared with pure Ga2O3 powder. This phenomenon was explained qualitatively in terms of the defects in the nanorods.

Synthesis, Raman Scattering and Defects of β-Ga2O3 Nanorods. Y.H.Gao, Y.Bando, T.Sato, Y.F.Zhang, X.Q.Gao: Applied Physics Letters, 2002, 81[12], 2267-9