Single crystals of Nd-doped material were successfully grown by using the float-zone method. At growth rates of between 5 and 30mm/h, single crystals with Nd contents of 2 to 15at% could be grown free of macroscopic defects such as second-phase precipitates and cellular growth. The grown crystals exhibited no step-faceting and had the desired diameter. According to etch-pit patterns, the dislocation density decreased from 105 to 104/cm2 during growth when the diameter of the grown crystals was less than 3mm and when the Nd content was less than 10at%. Growth rates lower than 30mm/h were also favorable in decreasing the dislocation density to about 104/cm2.

Float Zone Growth and Laser Performance of Nd:GdVO4 Single Crystals. T.Shonai, M.Higuchi, K.Kodaira, T.Ogawa, S.Wada, H.Machida: Journal of Crystal Growth, 2002, 241[1-2], 159-64