Polycrystalline materials were synthesized by using liquid-phase reaction methods, and excellent crystals with various Nd dopant concentrations were successfully grown by using the Czochralski method with strict growth control. It was found that the effective segregation coefficient of Nd ions in the crystals decreased with increasing Nd concentration for given pulling- and rotation-rates. Defects in the crystals were investigated by microscopy and chemical etching. Etch figures were observed on (100), (010) and (001) planes. Rectangular etch pits were found on the (100) and (010) planes, but those on the (001) plane were square. The main defects found were dislocations, sub-grain boundaries, step faceting, inclusions and color centers.

Growth and Defects of Nd:GdVO4 Single Crystal. L.Qin, X.Meng, J.Zhang, L.Zhu, H.Zhang, B.Xu, H.Jiang: Journal of Crystal Growth, 2002, 242[1-2], 183-8