The effects of deposition temperature (500 to 800C) on the structural defect and electrical resistivity of heteroepitaxial La0.5Sr0.5CoO3 films, with CeO2/ZrO2 double buffer layers, on Si(001) substrates were investigated by using high-resolution X-ray diffraction techniques. According to the deposition temperature range, 2 types of structural defect could be clearly distinguished. In the lower-temperature range (500 to 600C), the main defect in La0.5Sr0.5CoO3 was a mosaic structure with a huge coherent distortion. In the higher range (600 to 800C), a distinct lattice constant gradient was observed in La0.5Sr0.5CoO3; thus indicating the occurrence of lattice relaxation upon introducing an additional defect type, such as misfit dislocations. A high correlation between the electrical resistivity of La0.5Sr0.5CoO3, and the defect-type and concentration was found. The distribution of the electrical resistivity showed a mosaic dispersion dependence at 500 to 600C and a lattice relaxation dependence at 700 to 800C, where the mosaic dispersion degree and lattice relaxation degree could be estimated from the full-width at half-maxima of ω and 2θ/ω scans, respectively.

Effects of Deposition Temperature on Structural Defect and Electrical Resistivity in Heteroepitaxial La0.5Sr0.5CoO3/CeO2/YSZ/Si Films. C.H.Chen, A.Saiki, N.Wakiya, K.Shinozaki, N.Mizutani: Journal of Vacuum Science & Technology A, 2002, 20[5], 1749-54