It was recalled that the special characteristics of thermal energy atom scattering made it a uniquely useful technique for the investigation of diffusion and growth. Recent results obtained during homo-epitaxial and hetero-epitaxial growth on bare substrates, or on those with a surfactant layer, were reviewed. The fundamentals of the technique were described; with particular emphasis on the information that could be obtained concerning physical parameters such as Ehrlich-Schwoebel barriers, surface and edge diffusion, step bunching and interdiffusion at hetero-epitaxial interfaces. It was shown how diffusion and growth could be tailored by various means; such as the use of surfactants.

Studies of Surface Diffusion and Growth on Cu(111) by Means of Thermal Energy Atom Scattering. J.J.De Miguel, J.Camarero, R.Miranda: Journal of Physics - Condensed Matter, 2002, 14[24], 6155-72