Atomistic simulations of dislocation processes in Cu, based upon effective medium theory interatomic potentials, were considered. Results on screw dislocation structures and processes were reviewed with particular regard to point-defect mobilities and processes involving cross-slip. For example, the stability of screw dislocation dipoles was discussed. It was shown that the presence of jogs would strongly influence cross-slip barriers and dipole stability. New results on jogged edge dislocations and edge dislocation dipoles were also presented. The jogs were found to be extended, and simulations of vacancy-controlled climb showed that the jogs climbed easily in their extended form. The stability of small vacancy dipoles was examined and it was seen that the introduction of jogs could lead to the formation of Z-type faulted vacancy dipoles.

Atomistic Simulations of Dislocation Processes in Copper. T.Vegge, K.W.Jacobsen: Journal of Physics - Condensed Matter, 2002, 14[11], 2929-56