The bulk and grain boundary diffusion of 63Ni and 67Ga in polycrystalline samples was studied in the vicinity of the stoichiometric composition (23.5 to 28.3at%Ga). The bulk and grain-boundary diffusivities were investigated at 773 to 1373K by using the residual activity method. The Ga bulk diffusivity was found to increase with increasing Ga concentration, xGa. The increase in Ni bulk diffusivity with increasing xGa was marked at lower temperatures. The grain-boundary diffusivities of Ga and Ni in were close to one another and, contrary to the diffusion behavior of the components of Ni3Al, they did not exhibit any significant dependence upon xGa.

Ni and Ga Diffusion in Polycrystalline Ni3Ga. J.Cermák, V.Rothová: Intermetallics, 2002, 10[8], 765-9