By using large-grained thin films (average grain size of 40µm), the effects of grain boundaries on H-induced degradation could by measured by placing the upper Pt electrode (8µm x 8µm) sequentially from the center of the grain to the grain boundary in a controlled manner. It was found that the grain boundary was mainly responsible for the electrical degradation caused by exposure to the H. Little degradation with H exposure was observed when the Pt top electrode was located in the center of the grain.

Role of Grain Boundaries on Hydrogen-Induced Degradation in Lead Zirconate Titanate Thin Films. J.S.Lee, S.K.Joo: Applied Physics Letters, 2002, 81[17], 3230-2