The 133Xe was injected into single crystals via fission recoil, and the gas release kinetics were studied during subsequent annealing at temperatures ranging from 750 to 1000C. The release kinetics were found to be diffusion-controlled, and the data could be described by:

D (cm2/s) = 9.50 x 106 exp[-4.42(eV)/kT]

Trapping of the Xe by radiation-induced defects was observed at higher gas concentrations, and the trap concentrations were found to be dose- and temperature-dependent. The traps appeared to be radiation-generated defect clusters. The results were most consistent with a diffusion model that was based upon the transport of gas atoms in mobile defect clusters.

A.S.Ong, T.S.Elleman: Journal of Nuclear Materials, 1972, 42[2], 191-202