A study was made of the diffusion of Cu in V2O5 films at room temperature deposited V2O5(200nm)/Cu/(Si or glass) samples as a function of annealing temperatures in different gas environments. According to Auger electron spectroscopy, X-ray photo-electron spectroscopy and film resistivity measurements, Cu segregation and accumulation toward the surface of the oxide film occurred when vanadium oxide was deposited on the Cu buffer layer. The thickness of Cu overlayer was about one monolayer for the deposited samples at room temperature. Annealing treatment at above 250C in Ar or N2-20%H2 environment had enhanced the rate of diffusion process. It was proposed that the diffusion mechanism depended upon the nature of applied gases and their pressures.

Room Temperature Diffusion of Cu in Vanadium Pentoxide Thin Films. A.Iraji-zad, M.M.Ahadian, Z.Vashaei: Journal of Physics D, 2002, 35[11], 1176-1182