Fully stabilized zirconia samples were implanted with He ions of various energies (200keV and 1MeV) and with various fluences (1.4 x 1013 to 1.4 x 1016He+/cm2). Neutron depth profiling for different annealing temperatures and effusion experiments in 2 different experimental systems with different thermal annealing were performed on these samples. The samples were analyzed by electron microscopy during the various annealing stages. For the low-fluence samples, the diffusion of He was probably caused by vacancy

assisted interstitial diffusion with an activation energy of 1.6eV. In the highest fluence samples probably high pressure bubbles were formed during thermal annealing.

Helium Damage and Helium Effusion in Fully Stabilised Zirconia. P.M.G.Damen, H.Matzke, C.Ronchi, J.P.Hiernaut, T.Wiss, R.Fromknecht, A.van Veen, F.Labohm: Nuclear Instruments and Methods in Physics Research Section B, 2002, 191[1-4], 571-6