The penetration of P and As from P-doped and As-doped polycrystalline Si, and through HfSixOy films into Si(100), was studied by using a combination of chemical etching and secondary-ion mass spectrometry. Penetration of As and P was observed after rapid thermal annealing at 1050 and 1000C respectively. By modelling the P and As depth profiles in the Si substrate, their respective diffusivities in HfSixOy were found to be higher than the corresponding diffusivities in SiO2. This enhanced dopant diffusivity was proposed to be due to grain boundary formation in the dielectric after crystallization during annealing.

Phosphorus and Arsenic Penetration Studies through HfSixOy and HfSixOyNz Films. M.A.Quevedo-Lopez, M.El-Bouanani, M.J.Kim, B.E.Gnade, R.M.Wallace, M.R.Visokay, A.Li-Fatou, M.J.Bevan, L.Colombo: Applied Physics Letters, 2002, 81[9], 1609-11